A SCHOLARLY EXAMINATION OF THE CONSTANCY AND LEAKAGE MODERATION IN A FULLY SELECTED ELEVENTRANSISTOR STATIC RANDOM-ACCESS MEMORY CELL. International Journal of AI Electronics and Nexus Energy, [S. l.], v. 2, n. 1, p. 18–24, 2026. DOI: 10.64751/j91scc98. Disponível em: https://zesterapublications.com/journals/index.php/ijaene/article/view/228. Acesso em: 30 jul. 2026.